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Abstract Silicon is a common material of choice for semiconductor optics in the infrared spectral range, due to its low cost, well-developed high-volume manufacturing methods, high refractive index, and transparency. It is, however, typically ill-suited for applications in the visible range, due to its large absorption coefficient, especially for green and blue light. Counterintuitively, we demonstrate how ultra-thin crystalline meta-optics enable full-color imaging in the visible range. For this purpose, we employ an inverse design approach, which maximizes the volume under the broadband modulation transfer function of the meta-optics. Beyond that, we demonstrate polarization-multiplexed functionality in the visible. This is particularly important as polarization optics require high index materials, a characteristic often difficult to obtain in the visible. 

Abstract Analog quantum simulators rely on programmable and scalable quantum devices to emulate Hamiltonians describing various physical phenomenon. Photonic coupled cavity arrays are a promising alternative platform for realizing such simulators, due to their potential for scalability, small size, and high-temperature operability. However, programmability and nonlinearity in photonic cavities remain outstanding challenges. Here, using a silicon photonic coupled cavity array made up of$$8$$ $8$high quality factor ($$Q$$ $Q$up to$$\, \sim 7.1\times {10}^{4}$$ $~7.1\times {10}^4$) resonators and equipped with specially designed thermo-optic island heaters for independent control of cavities, we demonstrate a programmable photonic cavity array in the telecom regime, implementing tight-binding Hamiltonians with access to the full eigenenergy spectrum. We report a$$\sim 50\%$$ $~50\%$reduction in the thermal crosstalk between neighboring sites of the cavity array compared to traditional heaters, and then present a control scheme to program the cavity array to a given tight-binding Hamiltonian. The ability to independently program high-Q photonic cavities, along with the compatibility of silicon photonics to high volume manufacturing opens new opportunities for scalable quantum simulation using telecom regime infrared photons. 

The wave nature of light sets a fundamental diffraction limit that challenges confinement and control of light in nanoscale structures with dimensions significantly smaller than the wavelength. Here, we study light–matter interaction in van der Waals MoS₂nanophotonic devices. We show that light can be coupled and guided in structures with dimensions as small as ≃λ/16 (∼60nm at 1000 nm excitation wavelength), while offering unprecedented optical field confinement. This deep subwavelength optical field confinement is achieved by exploiting strong lightwave dispersion in MoS₂. We further study the performance of a range of nanophotonic integrated devices via far- and near-field measurements. Our near-field measurements reveal detailed imaging of excitation, evolution, and guidance of fields in nanostructured MoS₂, whereas our far-field study examines light excitation and coupling to highly confined integrated photonics. Nanophotonics at a fraction of a wavelength demonstrated here could dramatically reduce the size of integrated photonic devices and opto-electronic circuits with potential applications in optical information science and engineering. 

The combination of photonic integrated circuits and free-space metaoptics has the ability to untie technological knots that require advanced light manipulation due to their conjoined ability to achieve strong light–matter interaction via wave-guiding light over a long distance and shape them via large space-bandwidth product. Rapid prototyping of such a compound system requires component interchangeability. This represents a functional challenge in terms of fabrication and alignment of high-performance optical systems. Here, we report a flexible and interchangeable interface between a photonic integrated circuit and the free space using an array of low-loss metaoptics and demonstrate multifunctional beam shaping at a wavelength of 780 nm. We show that robust and high-fidelity operation of the designed optical functions can be achieved without prior precise characterization of the free-space input nor stringent alignment between the photonic integrated chip and the metaoptics chip. A diffraction limited spot of ∼3 μm for a hyperboloid metalens of numerical aperture 0.15 is achieved despite an input Gaussian elliptical deformation of up to 35% and misalignments of the components of up to 20 μm. A holographic image with a peak signal-to-noise ratio of >10 dB is also reported. 

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.